Extended Data Fig. 2: Schematic of graphene growth processes and the corresponding flow rates in each step for uniform multilayer growth.
From: Layer-controlled single-crystalline graphene film with stacking order via Cu–Si alloy formation
Three mass flow controllers were employed to control the flow rates of H2, CH4, and Ar, respectively. The H2 and Ar gas bottles had a 6N purity. CH4 was introduced only to form SiC in step II. The temperature was increased to 1075 °C, and 200 sccm of Ar was injected into the chamber for the Si sublimation in step III. Pre-diluted CH4 (with Ar) gas of different concentrations was purchased. For growth in Fig. 2, the concentration of CH4 was 0.1%. The growth times of the island and full film were 5 and 10 min, respectively.
