Extended Data Fig. 2: Frequency dependent capacitance (d/aM ≈ 0.6).
From: Charge-order-enhanced capacitance in semiconductor moiré superlattices
Top gate capacitance as a function of top gate voltage at 10 K (a) and at 20 K (b) under different excitation frequencies (10 mV modulation amplitude). A decrease in capacitance with increasing frequency is observed at 10 K, signifying the growing importance of the resistive component in the AC measurement. Meanwhile, no obvious frequency dependence is seen at 20 K, a temperature at which the sample/contact resistance becomes substantially smaller. The capacitance measurement is therefore in the low-frequency limit and reliable for most of the filling factors except ν = 1 and ν = 2.
