Extended Data Fig. 7: Electric-field effect on the insulating states.
a-f, Gate dependence of the reflectance contrast spectrum of the sensor 2 s exciton at representative electric fields, including 67 mV/nm (a), 43 mV/nm (b), 18 mV/nm (c), 0 mV/nm (d), -18 mV/nm (e), and -43 mV/nm (f). Electrons and holes are introduced into the channel for Vtot above and below about -1 V, respectively. The electric field limits the operating voltage range of the sensor. In addition, notable 2 s exciton energy shift is observed on the hole side, but not on the electron side, when the electric field switches sign. The result indicates strong layer hybridization for the conduction bands in twisted WSe2, the band edge of which is located at the Q point of the Brillouin zone.
