Fig. 2: LSES. | Nature Nanotechnology

Fig. 2: LSES.

From: A single hole spin with enhanced coherence in natural silicon

Fig. 2

a, Spin-electric susceptibility with respect to VG2 (LSESG2) as a function of magnetic field angle θzx (symbols), at constant fL = 19 GHz. The LSES vanishes at θzx = 41 and 106, as indicated by the two arrows. The solid line corresponds to the numerically calculated LSESG2. b, Top: pulse sequence used to measure LSESG1, a voltage pulse of amplitude δVG1 and duration τz is applied to G1 during the first free evolution time of a Hahn-echo sequence. Bottom: spin-up fraction P as a function of τz for δVG1 = 2.16 mV (diamonds), 3.12 mV (stars) and 4.80 mV (squares), at θzx = 90. The oscillation frequency varies with δVG1. c, δVG1 dependence of the frequency shift extracted from the Hahn-echo measurements at θzx = 0, 42 and 90. Symbols in the latter data set correspond to the P oscillations shown in b. The solid lines are linear fits to the experimental data whose slope directly yields LSESG1. d, Measured (symbols) and calculated (solid line) LSESG1 as a function of θzx, at constant fL = 17 GHz. The negative sign of LSESG1 is inferred from the shift of fL under a change in VG1.

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