Extended Data Fig. 5: Critical field at each arm of the device.
From: A tunable monolithic SQUID in twisted bilayer graphene
The voltage of the back gate is set to the optimal point for every figure. a Differential resistance as a function of current bias and magnetic field when VG1 = 10V, preventing any supercurrent from flowing through arm 1 and VG2 = -0.5V maximizes the critical current of arm 2. We thus observe the resistance across arm 2 of the device as a function of current and magnetic field. b Same measurement as in a, this time with VG2 = 10V and VG1 = -0.37V.
