Fig. 5: Implementing a rear RDBL for high-perfomance nanotextured PSTSCs.
From: Nano-optical designs for high-efficiency monolithic perovskite–silicon tandem solar cells
a,b, Schematic of the PSTSC layer stack with standard reflector (a) and with an RDBL at the rear side (b). (i), (n) and (p) refer to intrinsic, n-doped and p-doped layers. The numbered black frames mark the standard rear side (1) and the SiO2 (2) and grid finger (3) regions of the RDBL. c, 2D map of Jph,Si for different SiO2 (y axis) and TCO thicknesses (x axis). The configurations corresponding to the experimental layer stacks are marked with arrows and the corresponding Jph,Si is indicated. d, 2D map of power losses in the silicon bottom cell for different grid finger pitches (y axis) with 40 µm finger width and TCO thickness (x axis). Power loss in mW cm−2 is shown for the RDBL configuration and for the standard reflector. e, EQE spectra (dashed lines, perovskite EQE; solid lines, silicon EQE) of a planar PSTSC with a standard rear side (black) and a nanotextured (n.t.) PSTSC with an RDBL (red). The integrated photogenerated current densities of perovskite (Jph,pero) and silicon (Jph,Si) are shown. f, Current-density/voltage (J–V) characteristics of a nanotextured PSTSC with an RDBL certified by CalLab at Fraunhofer ISE.
