Extended Data Fig. 3: Characterization of intrinsic BPVE in pristine 3R-MoS2 device.
a, Cross-bar shaped pristine 3R-MoS2 device. The thickness of the flake is about 2 nm. b, Spatial distribution of photocurrent along the armchair direction mapped in the area marked by white dash frame in a. The black lines indicate the electrode edge and the black dash lines illustrate the edges of the 3R-MoS2 flake. c, The light polarization dependence of the photocurrent along the armchair direction under illumination of 100 μW. The illuminated position is at the centre of device marked by red circle. Black line is the fit by the BPVE phenomenology theory. The offset may come from the electrode contact-related contribution.
