Extended Data Fig. 9: Te SV diffusion barrier along different diffusion pathways. | Nature Nanotechnology

Extended Data Fig. 9: Te SV diffusion barrier along different diffusion pathways.

From: Atomically precise vacancy-assembled quantum antidots

Extended Data Fig. 9

Atomic model illustrates the corresponding diffusion pathways a, directly to the neighboring position. c, through the neighboring Te position in the bottom sublayer. e, through the neighboring position above the Te position in the bottom sublayer. g, through the neighboring Pt position. i, through the neighboring Te position in the top sublayer. The arrow in dashed line indicates the pathway of a Te atom migrate from the initial position to the final position, which is equal to a vacancy migration to the opposite direction. b,d,f,h,j, The energy barrier for the corresponding diffusion pathways.

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