Extended Data Fig. 5: Statistics of QAD formation in PtTe2 after different annealing treatment.
a, Schematic illustration of self-assembled vacancy-based QADs formed on PtTe2 surface. Typical STM images of PtTe2 surface after thermal annealing at b, 120 ∘C for 1 hour, c, 140 ∘C for 1 hour, d, 150 ∘C for 2 hours and e, 160 ∘C for 1 hour. The setpoint is VS = − 2.5 V, It = 300 pA. f, Histogram of the statistics results of the percentage of SV and different sized QADs under different conditions.
