Extended Data Fig. 3: Correlated insulator at n = D = 0 in pentalayer rhombohedral graphene.
From: Correlated insulator and Chern insulators in pentalayer rhombohedral-stacked graphene
a, The calculated single-particle density of states (DOS) in Bernal bilayer, rhombohedral trilayer (time a factor of 15 and 3 for comparison), and pentalayer graphene at D = 0. The blue and orange shaded areas depict the DOS of the valence and conduction band. b–d, The n-D Rxx map of the bilayer, trilayer and pentalayer graphene measured at 2 K. Pentalayer graphene has a much larger DOS and band overlap at n = 0 compared to the bilayer and trilayer case and expects to be more conducting at D = n = 0. However, both bilayer and trilayer graphene are conducting at D = n = 0, while an insulating state appears at D = n = 0 in pentalayer graphene, indicating the non-single-particle origin of the insulating state. The off-diagonal line in the n-D map of pentalayer graphene is due to the big contact resistance when the bottom gate is zero.
