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Nanoelectronics

Fluoride dielectrics for 2D transistors

Nature Nanotechnology volume 19, pages 880–881 (2024)Cite this article

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Room-temperature wafer-scale thermal evaporation of 20 different polycrystalline rare-earth-metal fluoride films for their use in 2D transistors is demonstrated.

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Fig. 1: The family of fluorides as dielectric layer.

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Authors and Affiliations

  1. Institute for Microelectronics, TU Wien, Wien, Austria

    Tibor Grasser, Michael Waltl & Theresia Knobloch

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  1. Tibor Grasser
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  2. Michael Waltl
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  3. Theresia Knobloch
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Correspondence to Tibor Grasser.

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Grasser, T., Waltl, M. & Knobloch, T. Fluoride dielectrics for 2D transistors. Nat. Nanotechnol. 19, 880–881 (2024). https://doi.org/10.1038/s41565-024-01710-5

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