Extended Data Fig. 8: Structure of metal-semiconductor particles.
From: Half-wave nanolasers and intracellular plasmonic lasing particles
a, Schematic and SEM images of disc-on-pillar array following SiO2 coating and gold deposition. b, Bright-field and SEM images of plasmonic laser particles drop-cast onto a silica-coated silicon substrate, presenting both the III/V side (left) and the Au side (right). c, Transmission Electron Microscopy (TEM) image of a cross-section of a sample, prepared using focused ion-beam (FIB) etching. The image reveals the InGaAsP layer with a thickness of ~290 nm, 5–7 nm thick SiO2 layer, and ~ 80-nm thick gold layer. d, Higher magnification view of the cross section. e-f, Scanning transmission electron microscopy (STEM) images and elemental maps. The samples in c-f were prepared by placing the InGaAsP side on a silica-coated silicon substrate and depositing Ga on top of the Au side of the particles. The samples were then placed upside down on a TEM grid.
