Extended Data Fig. 4: Absence of hysteresis in the magnetoconductance under in-plane magnetic field. | Nature Nanotechnology

Extended Data Fig. 4: Absence of hysteresis in the magnetoconductance under in-plane magnetic field.

From: Switching on and off the spin polarization of the conduction band in antiferromagnetic bilayer transistors

Extended Data Fig. 4

a, As discussed in the main text and above, at small magnetic fields 2 L CrPS4 can be in one of two magnetic states, labelled A (left column) and B (middle column), where the magnetization of the top and bottom layers is opposite. The spin polarization of the electrons accumulated by the gate voltage (represented by the orange shadow) in each layer is determined by the magnetization of the Cr atoms in the same layer. When the magnetic field is applied perpendicular to the layers (as discussed in Fig. 3 of the main text), state A and B have different energy (at finite D/ε0). However, when the magnetic field is applied parallel to the layers, the Zeeman energy of the electrons vanishes and state A and B always have the same energy. As a result, no hysteresis in the magnetoconductance is expected. b, Indeed Ī“G measured at T = 2 K for different displacement fields (from top to bottom: āˆ’0.6 V/nm, āˆ’0.32 V/nm, 0 V/nm,0.35 V/nm, 0.62 V/nm) is independent of the direction in which the magnetic field is swept (the red (blue) trace represents the magnetoconductance measured as the field is swept up (down)), that is, no hysteresis is observed experimentally when the magnetic field is applied parallel to the plane, irrespective of the applied displacement field Source data.

Source data

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