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Electrically activating two-dimensional antiferromagnets

Nature Nanotechnology volume 20, pages 590–591 (2025)Cite this article

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A transistor made from bilayer A-type antiferromagnet CrPS4 provides control over the spin polarization at the Fermi level and magnetoelectric readout.

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Fig. 1: Electric field effect on the spin- and layer-resolved band properties of a bilayer A-type antiferromagnetic semiconductor.

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Authors and Affiliations

  1. Engineering Research Center of Nanophotonics & Advanced Instrument, Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai, China

    Shi-Jing Gong

  2. Department of Electrical & Computer Engineering and Quantum Technology Center, University of Maryland, College Park, MD, USA

    Cheng Gong

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  1. Shi-Jing Gong
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  2. Cheng Gong
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Correspondence to Shi-Jing Gong or Cheng Gong.

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Gong, SJ., Gong, C. Electrically activating two-dimensional antiferromagnets. Nat. Nanotechnol. 20, 590–591 (2025). https://doi.org/10.1038/s41565-025-01884-6

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