Fig. 3: MZI modulator characterization at 300 K. | Nature Photonics

Fig. 3: MZI modulator characterization at 300 K.

From: High-speed programmable photonic circuits in a cryogenically compatible, visible–near-infrared 200 mm CMOS architecture

Fig. 3: MZI modulator characterization at 300 K.

a, Cross-port power transmission coefficient of several wavelengths versus differential driving voltage of the MZI. b, Extracted phase shifts from sinusoidal fits at the same wavelengths. c, Photodiode response at 737 nm with a 5 MHz, 20 V peak-to-peak (pk–pk) square wave applied. d, Photodiode output with 15 ns full-width at half-maximum, 20 V pk–pk Gaussian pulse applied. e, Zoomed-in view of the falling edge of 5 MHz square in c, showing a fall time of ~5 ns. f, Normalized modulator response for a 3 V sinusoidal signal showing mechanical resonance at 241 MHz.

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