Table 1 Major performance parameters of photon-trapping APDs in this work, AlInAsSb APDs and state-of-the-art HgCdTe APDs at 2 µm

Present work

1 × 10⁻⁶ A cm⁻² (180 K)

~700

~22%

~7 GHz

~200 GHz

2 µm AlInAsSb APD¹¹

6 × 10⁻⁵ A cm⁻² (180 K)

~200

~20%

~1.5 GHz

~44 GHz

2 µm HgCdTe APD⁸

2 × 10⁻⁴A cm⁻² (125 K)

~1,000

~75%

Not reported

Not reported