Extended Data Fig. 5: Simulated optoelectronic characteristics of OELGs.
From: On-chip optoelectronic logic gates operating in the telecom band
(a) Electric potential distribution of Au/BP/Au device and an “M” shape potential distribution of optoelectronic logic AND device simulated by Sentaurus TCAD. (b) Surface potential difference between BP and Au by Kelvin probe force microscopy. The results show that the work function of BP is around 0.38 eV higher than that of Au. The work function difference between BP and Au is smaller than that of the theoretical value, which may be attributed to the surface oxidation of BP. (c) Diffusion process of photogenerated electrons and holes in Au/BP/Au device under WG1 triggering. (d) Energy band diagram for drift process of photogenerated electrons and holes in Au/BP/Au device under WG1 triggering. (e) Simulated structure of Au/BP/Au device and illumination mode. The light spot diameter is approximately 1 µm. (f) Simulated I-V curves of Au/BP/Au device under light illumination of different spot positions.
