Extended Data Fig. 8: Integrated Au/InSe/Au and Au/BP/Au under free space for OELGs.
From: On-chip optoelectronic logic gates operating in the telecom band
(a) Optical microscopy image of Au/InSe/Au device. (b) Raman spectrum of the InSe. (c) Output characteristic curves of Au/InSe/Au device in the dark and under 1.55 μm light illumination. It is found that OR, AND, and XNOR logic functions can be constructed in the integrated Au/BP/Au device. (d) Output current for four states of logic OR gate with all-optical inputs at a bias voltage of 3 V. (e) Output current for four input states with mixed optical and electrical inputs. (f) Output current for four input states of logic XNOR gate with mixed optical and electrical inputs. (g) Optical microscopy image of Au/BP/Au device without integrating with waveguides. The red circles mean the position of the localized light spot. (h) Output characteristics of Au/BP/Au device under spot illumination. (i) Output current for four input states of logic XNOR gate with mixed optical and electrical inputs.
