Extended Data Fig. 2: Additional zero field tunnel barrier data and induced gaps.
From: Non-Majorana states yield nearly quantized conductance in proximatized nanowires
a and b, Barrier gate scans from the left and right sides respectively, while S-gate is set to 1 V. The two sides show similar barrier gate dependence and overall transparency. Note the left side reaches 3*2e2/h at saturated regime, indicating a possible contact resistance of 3-4 kΩ. c, Pinch off traces at Vbias = 10 meV from panel a and panel b. d and e, Differential conductance GL and GR as functions of S-gate voltage and source-drain voltage, while TL = -0.015 V and TR = -0.075 V. While the barrier gates are set near the pinch off regime, the two sides have very similar induced gaps. f, Bias linecuts at S-gate = -0.75 V (yellow dashed lines) from panel d and panel e. The left side has a gap with Δ = 800 μeV and the gap on the right side is about 760 μeV. The error bar for the gap estimation is 40 μeV.
