Extended Data Fig. 10: Evidence of the fine structures.
From: Moiré engineering of electronic phenomena in correlated oxides
a, Near-field image taken across the LAO twin boundary (indicated by the red dashed line). On the non-moiré region (left), DS-induced electronic pattern can be faintly identified in the nano-IR contrast. b, Line profile of the white dashed line in a. The period is ~540 nm, consistent with the OC-SEM image of DS. c, Near-field image taken on the moiré region in a and filtered with a Fourier filter for \({\mathrm{k}} < \frac{1}{{250{\mathrm{nm}}}}\).Fine structures of the electronic pattern corresponding to MS (or DS) can be observed. d, Line profile across the fine structure. The period is ~610 nm, qualitatively consistent with the typical MS (or DS) periodicity.
