Extended Data Fig. 3: Incipient CI states at v = 1 and 3 in device D3.

a, ρ map surrounding the CI states in device D3 at T = 20 mK. b, ρ(T) acquired where the v = 1 CI state is most resistive. A weak metal-insulator transition is observed at T ≈ 150 mK. c, ρ(T) of the v = 3 CI state, exhibiting a metal-insulator transition at T ≈ 2.5 K.