Extended Data Fig. 1: Spatial dependence of electronic compressibility at zero field.
From: Correlated Hofstadter spectrum and flavour phase diagram in magic-angle twisted bilayer graphene
Linecut of dμ/dn as a function of gate voltage (Vg) measured along a line in the top left contact area of the device shown in Fig. 1a. The Landau fans shown in Fig. 1 and Extended Data Fig. 4 are taken at x = 40 nm and x = 300 nm, respectively. The sawtooth pattern on the electron side generically exhibits a larger amplitude and negative dμ/dn at the ν = 2 transition. Dashed lines denote gate voltages corresponding to ν = ±4.
