Extended Data Fig. 1: Coincident SPCM and PCFM imaging of WTe₂ Device B.

(a) Experimental SPCM image of I_global in WTe₂ Device B for P = 100 μW at 661 nm. (b) Experimental SPCM image of I_global for P = 300 μW at 515 nm. The collected photocurrents have identical spatial patterns regardless of optical power or wavelength (see also Fig. 4a of main text). The intensity is slightly higher at 515 nm likely due to better objective transmission and sample absorption at shorter wavelengths. (c) The streamlines for the weighting field ∇ψ within Device B. We solve ∇²ψ = 0 with equipotential surfaces ψ = 1 and ψ = 0 around two localized positions on the upper (current collecting) and lower (grounded) electrical contacts, respectively. The background colormap denotes the potential ψ. (d) Linear dependence of I_global on the optical power P at 661 nm for fixed photoexcitation locations on the \(\langle 1\overline{1}0\rangle\) (red) or 〈110〉 (blue) edges in Device B. The global electrical measurement is consistent with the local magnetic measurement (Δφ) presented in Fig. 2b of the main text. (e) PCFM image of J(r) when photoexciting the region of high interior I_global near the upper gold (Au) electrical pad. The four-fold APTE pattern is negligibly changed from the center of the flake. (f) PCFM image for photoexcitation at the corner between the 〈110〉 and \(\langle 1\overline{1}0\rangle\) edges. The locations for the measurements (d-f) within Device B are labeled in the SCPM image shown in a).