Extended Data Fig. 2: PL spectra of an H-stacked device showing more fractional fillings.
From: Valley-polarized excitonic Mott insulator in WS2/WSe2 moiré superlattice
(a) and (b) are the doping-dependent PL spectra measured on device H5 using an excitation power of 0.2 µW and 300 µW, respectively. A CW laser with photon energy centered at 1.70 eV was used for the optical excitation, and all data were taken at a temperature of 5.0 K.
