Extended Data Fig. 6: Extracting TBKT in device 1. | Nature Physics

Extended Data Fig. 6: Extracting TBKT in device 1.

From: Unconventional superconducting quantum criticality in monolayer WTe2

Extended Data Fig. 6

a, Characteristic nonlinear I-V curves on a logarithmic scale at various temperatures. The black dashed line shows a tentative fit to the Vxx IDC3 power law, which extracts TBKT to be 580 mK for ng = 22.84 × 1012 cm−2. b, The corresponding differential resistance (dVxx/dI) as a function of IDC and T. c, dRxx/dT as a function of ng and T (the same data of Fig. 1b, using two neighboring points for the temperature derivative). The black dots represent TBKT extracted by fitting to the Vxx IDC3 power law for various ng. d, B-dependence of Rxx as a function of T for ng = 22.84 × 1012 cm−2.

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