Extended Data Fig. 1: Effects of Disorder.
From: Topological edge and corner states in bismuth fractal nanostructures

a-e Geometric disorder, f-j potential disorder, k-o displacement disorder. a,f, and k show the type of disorder studied, and the other plots are the LDOS in presence of the specific disorder. All different types of disorder have been simulated using the same parameters as before; a number of grid points nx = nyâ=â200, an effective electron mass meffâ=â0.42, a lattice parameter \({a}_{0}\)â=â1ânm, an intrinsic spin-orbit parameter λISOCâ=â106, a potential height uâ=â0.9âeV, and FWHM of the Gaussian potential dâ=â0.62ânm. For geometric disorder, we used 1500 waves, but for the other two types of disorder only 750 waves. In the potential disorder, we introduced an error to the potential height taken from a uniform distribution between [-0.1âu, 0.1âu]. For the position disorder, the scatterers coordinates are modified using a uniform distribution between [-0.1\({a}_{0}\), 0.1\({a}_{0}\)] for both axes.