Fig. 6: Effects of voltage gating on the mutual synchronization of SHNOs.
From: Spin-wave-mediated mutual synchronization and phase tuning in spin Hall nano-oscillators
a, Simulated device. The extra MgO layer induces VCMA on CoFeB by allowing the voltage to modify the interfacial PMA. b, PSD of a single oscillator as a function of applied voltage. Notice a discontinuity in the auto-oscillation frequency but no oscillator death. c, PSD of a double oscillator as a function of applied voltage. The gap in the middle shows a lack of phase synchronization between the two SHNOs. d, Phase difference as a function of applied voltage. It takes as little as ±4 V to make the SHNOs in phase.
