Extended Data Fig. 6: Filling factor dependent anomalous Hall effect near v = -3 for different twist angles.
From: Ferromagnetism and topology of the higher flat band in a fractional Chern insulator
a, Magnetic field dependence of Rxx (top) and Rxy (bottom) at selected filling factors near ν = -3 for 2.6° twisted MoTe2 device. b, ∆Rxy versus magnetic field and filling factor. Here, ∆Rxy is obtained by taking the difference of Rxy between sweeping magnetic field up and down. The data in a and b are taken at T = 15 mK and D/ε0 = 0 from a different cool down of the same sample in the main Fig. 2. c, d, Similar data for a 3.1° twisted MoTe2 device, and e, f, similar data for a 3.8° twisted MoTe2 device. The ∆Rxy is positive (red) at the ν = -1 Chern insulator state (C = -1) for all devices. A sign reversal of the AHE at ν = -3 is evident between the 2.6° device and the devices with twist angles of 3.1° and 3.8°.
