Fig. 3: Polarization-sensitive and charge-transfer-induced switching in a domain texture.
From: Valley-controlled photoswitching of metal–insulator nanotextures
a, Three-fold symmetric rotational domains on a flat Si(111) wafer surface. The LEED image comprises a superposition of domain-specific reflexes. b, Polarization-dependent switching of rotational domains. Δφ denotes the angle between the in-plane electric field and the nanowire orientation. c, Isotropic switching at near-IR wavelengths for all domain orientations in the entire fluence range. d, Transition between valley-selective to multiband excitation manifests in a loss of the intrinsic anisotropy (Fig. 2) due to the interdomain transfer of hot charge carriers. Incident fluences for 0.8 eV, 1.2 eV and 1.55 eV are 1.60 mJ cm–2, 1.40 mJ cm–2 and 2.03 mJ cm−2, respectively.
