Fig. 3: Magnetic field and polarization-resolved properties.
From: Optical signatures of interlayer electron coherence in a bilayer semiconductor
a,b, Electric-field sweeps at n ≈ 1.4 × 1012 cm−2 illustrate the similar appearance of the stochastic anti-crossing for both light polarizations and for both Bz = 0 T (a) and Bz = 9 T (b). At Bz = 9 T, the σ+-measurements reveal a small intensity asymmetry between the lower and upper exciton branches, suggesting a slight development of \({{\mathcal{W}}}_{0}\) for this light polarization. c, At Bz = 9 T and n ≈ 1.4 × 1012 cm−2 (dashed white lines), conduction-band electrons are expected to be fully spin-polarized. This is supported by density sweeps at Ez = 0 of the A-exciton, where the onset of the AP branch for σ−-polarized light (primarily probing spin-↑ electrons) is delayed compared with the σ+-polarized one (essentially sensitive to spin-↓ electrons); these onsets are indicated with dashed green lines.
