Extended Data Fig. 1: Device fabrication of rhombohedral graphene.
From: Isospin magnetic texture and intervalley exchange interaction in rhombohedral tetralayer graphene
a, Optical image of the hBN/ABCA Graphene/hBN stack (blue) on Si/SiO2 substrate (gray-brown) with Ti/Pt bottom gate (dark brown) for device B. b, Same as (a) for devices A and C. c, Raman map of the Gaussian-fitted width of the 2D peak in the dashed rectangle in (a). The yellow-red triangular region corresponds to ABCA graphene stacking, and the blue-green regions correspond to ABAB stacking, separated by sharp domain walls. d, Same as (c) for the region marked by the dashed rectangle in (b). e, Typical 2D peaks of the Raman spectrum for the two stacking configurations measured at the points marked by black and red crosses in (c). The ABAB 2D peak is narrower and more symmetric than the ABCA 2D peak. f, Optical image of the final device B (right Hall bar). g, Final devices A (left) and C (right).
