Extended Data Fig. 5: Transport properties of devices B and C.

a, \({R}_{{xx}}(n,D)\) of device B measured at \({B}_{z}=\) 0 T. The white dashed curve is the \({n}_{a}(D)\) line derived from single particle calculations. Blue and yellow lines are M-to-1/2M and 1/2M-to-1/4M transition lines obtained from local magnetization measurements at low field in Fig. 2a. b, Same as (a) at \({B}_{z}=\) 3 T. The cyan dashed curve is \({n}_{\pi }(D)\) line derived from single particle calculations. The blue local magnetization transition line closely follows the PSP-M-to-1/2M transition observed in transport. The 1/4M phase at 3 T is seen to expand to slightly higher \(\left|n\right|\) and considerably larger \(D\) as compared to the low-field 1/2M-to-1/4M transition line (black dashed curve). c, FFT of the QOs of \({R}_{{xx}}\)(1/\({B}_{z}\)) vs. \(n\) measured at \(D=\) 0.33 V/nm. The FFT frequency is normalized with respect to Hall carrier density \({n}_{{Hall}}\). d,e, \({R}_{{xx}}(n,D)\) of device C measured at \({B}_{z}=\) 0 (d) and 5 T (e). f, Low-field Hall resistance \({R}_{{xy}}\) vs. \({B}_{z}\) in device B measured in the 1/2M phase (red line) and in the 1/4M (black line) showing AHE.