Extended Data Fig. 3: Temperature decay due to in-plane heat diffusion.
From: Controllable hydro-thermoelastic heat transport in ultrathin semiconductors at room temperature
Temperature dynamics as calculated using the phenomenological Fourier model over a full modulation window of 4 μs (1/240 kHz). A relatively large thermal diffusivity of 0.20 cm2/s leads to efficient heat spreading to the heat sink at the edges of the suspended crystal. Consequently, less heat accumulates within each cycle, enabling the system to reach thermal equilibrium before the subsequent pump-on window. In contrast, a lower thermal diffusivity of 0.02 cm2/s leads to slower heat spreading, resulting in more heat accumulation, and leftover heat at the end of the modulation period.
