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Molecular precursors for the electrodeposition of 2D-layered metal chalcogenides

Nature Reviews Chemistry volume 9, pages 88–101 (2025)Cite this article

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Abstract

Two-dimensional transition metal dichalcogenides (TMDCs) are highly anisotropic, layered semiconductors, with the general formula ME2 (M = metal, E = sulfur, selenium or tellurium). Much current research in this field focusses on TMDCs for catalysis and energy applications; they are also attracting great interest for next-generation transistor and optoelectronic devices. The latter high-tech applications place stringent requirements on the stoichiometry, crystallinity, morphology and electronic properties of monolayer and few-layer materials. As a solution-based process, wherein the material grows specifically on the electrode surface, electrodeposition offers great promise as a readily scalable, area-selective growth process. This Review explores the state-of-the-art for TMDC electrodeposition, highlighting how the choice of precursor (or precursors), solvent and electrode designs, with novel ‘device-ready’ electrode geometries, influence their morphologies and properties, thus enabling the direct growth of ultrathin, highly anisotropic 2D TMDCs and much scope for future advances.

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Fig. 1: Crystal structure of a 2D layered TMDC.
Fig. 2: A typical three-electrode electrochemical cell set-up for electrodeposition.
Fig. 3: The molecular species involved in the deposition of elemental tellurium from reduction of [TeCl6]2−.
Fig. 4: A multi-source precursor approach for the electrodeposition of ternary germanium antimony telluride alloys.
Fig. 5: Examples of single-source precursors used for 2D transition metal dichalcogenide electrodeposition.
Fig. 6: Two-dimensional TMDC electrodeposition over a conductor.
Fig. 7: Anisotropic growth of 2D TMDCs from the edges of nano-band electrodes out over an insulator (SiO2).

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Acknowledgements

The authors thank the Engineering and Physical Sciences Research Council (EPSRC), UK, for funding our work in this area, mainly through grants EP/V062689/1, EP/P025137/1 and EP/N035437/1.

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Authors and Affiliations

  1. School of Chemistry, University of Southampton, Southampton, UK

    Philip N. Bartlett, Victoria K. Greenacre, Gillian Reid & Shibin Thomas

  2. School of Electronics and Computer Science, University of Southampton, Southampton, UK

    C. H. Kees de Groot, Ruomeng Huang & Yasir J. Noori

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  1. Philip N. Bartlett
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  4. Ruomeng Huang
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Contributions

P.N.B. and G.R. conceived the idea and drafted the proposal. P.N.B., R.H., S.T. and G.R. wrote most of the content. Y.J.N., C.H.D.G., R.H., V.K.G. and S.T. prepared the graphic concepts. All of the authors edited and revised the manuscript.

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Correspondence to Philip N. Bartlett or Gillian Reid.

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Glossary

Anisotropic growth

Growth strongly favoured in one or two specific directions; in the case of transition metal dichalcogenides, this is typically from the edges of the growing layer (to produce a 2D sheet).

Area-selective growth

Growth of materials only on specific regions of a pre-patterned substrate.

Brighteners

Chemical used in electrodeposition to increase the optical brightness of the deposited material.

Counter electrode

The electrode used to complete the circuit in the electrochemical cell. It has to pass an equal but opposite current from that at the working electrode.

Electrolyte

The solution used for the electrochemical experiment, usually comprising the solvent, precursor (or precursors) and a redox inactive cation–anion salt that dissociates in the solvent to form ions that carry the charge.

iR drop

Difference between the applied potential and the potential at the working electrode owing to passage of current through solution, or other uncompensated resistance.

Levellers

Chemical used in electrodeposition to increase the uniformity of the deposited material.

Macroelectrodes

Electrode with diameter >0.1 mm.

Microelectrodes

Electrode with diameter <50 μm.

Nano-band electrodes

Electrode structure wherein the conducting surface is in the form of a line <100 nm deep, typically fabricated on a silicon substrate.

Planar diffusion

Diffusion in 1D to or from the electrode surface.

Radial diffusion

Diffusion in 2D or 3D to or from the electrode surface.

Single-source precursors

(SSPs). Compounds that can be used for depositing the target transition metal dichalcogenide that contains pre-formed metal–chalcogen bonds.

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Bartlett, P.N., de Groot, C.H.K., Greenacre, V.K. et al. Molecular precursors for the electrodeposition of 2D-layered metal chalcogenides. Nat Rev Chem 9, 88–101 (2025). https://doi.org/10.1038/s41570-024-00671-6

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