Extended Data Fig. 8: Excitonic transistor characterization for different positions of the excitation laser spot.
From: Room-temperature electrical control of exciton flux in a van der Waals heterostructure
a, Normalized emission intensity (transistor output) as a function of the distance between optical injection and the emission point di–o, which is the same as in Fig. 3c, shown for the ON (blue, Vg1 = 0 V) and OFF (black, Vg1 = 16 V) states. b, Transistor efficiency calculated as the ratio between output emission in the ON and OFF states for different input–output separation distances di–o. Efficiency reaches a maximum when the laser spot is moved completely beyond the gate, so that the energy barrier stays between the input and the output and thus effectively modulates exciton diffusion.
