Extended Data Fig. 3: Tip band bending effect
From: Spectroscopic signatures of many-body correlations in magic-angle twisted bilayer graphene
a, Schematic (not to scale) of the electrostatic simulation for the device geometry in our experiment. b, Density under and away from the tip as a function of gate voltage, calculated using the geometry in a with height z = 4 Å, radius r = 0.6 nm, a work function difference of 0.25 V and the band structure from Fig. 1e. c, Density and DOS at the Fermi level as a function of gate voltage under the tip with the same parameters as in b. d, e, Zero-bias conductance as a function of gate voltage with different set point conditions (Vset = +200 mV, Iset = 120 pA for d and Vset = −200 mV, Iset = 500 pA for e) showing different apparent gate efficiencies.
