Extended Data Fig. 6: Influence of defect distributions and energy fluctuations in Monte Carlo simulations of domain formation dynamics.
From: Electrochemically reconfigurable architected materials

a–c, Variations in correlation length ξ with coupling ramp rate R from MC simulations with different energy fluctuations QEC (from 0.00001 to 0.002) and defect distributions hi (from a standard deviation of 0.05 to 0.2). Data points are connected by straight lines. d, Relation between correlation length ξ and normalized coupling ramp rate R/QEC following the same trend for different levels of electrochemical energy fluctuations QEC.