Extended Data Fig. 7: Demonstration of hole edge accumulation in n-doped bulk.
From: Imaging work and dissipation in the quantum Hall state in graphene
a, Scanning gate Rxx(r) imaging of sample B (in the red dashed area in Extended Data Fig. 2) in the vicinity of n-doped ν = 2 plateau (Vbg = 0.12 V, ν = 2.07, Vpg = −2 V, see Extended Data Fig. 5c for transport) using a positive Vtg of 6 V. The depletion of the hole accumulated edges by the positive Vtg cases increase in Rxx(r) similar to the case of the p-doped bulk. b, Same as a in the vicinity of the ν = 6 plateau (Vbg = 1.475 V, ν = 5.98). In both images, Idc = 1.75 µA.
