Extended Data Fig. 6: Experimental conditions for electrical measurements.
From: Electrical manipulation of a topological antiferromagnetic state
a, Sequence used for the SOT-induced switching measurements. b, Thickness dependence of the resistivity of the NM (Pt or W) layer obtained in the Si/SiO2/Ru(2)/Mn3Sn(40)/Pt or W(dNM)/AlOx(5) Hall bar devices at room temperature.
