Correction to: Nature https://doi.org/10.1038/s41586-020-2208-xPublished online 22 April 2020
In the first sentence of this Article, “Ultrathin ferroelectric materials could potentially enable low-power perovskite ferroelectric tetragonality logic and nonvolatile memories”, the words “perovskite ferroelectric tetragonality” should not have appeared. This error has been corrected online.
Author information
Authors and Affiliations
Corresponding authors
Rights and permissions
About this article
Cite this article
Cheema, S.S., Kwon, D., Shanker, N. et al. Publisher Correction: Enhanced ferroelectricity in ultrathin films grown directly on silicon. Nature 581, E5 (2020). https://doi.org/10.1038/s41586-020-2297-6
Published:
Version of record:
Issue date:
DOI: https://doi.org/10.1038/s41586-020-2297-6
This article is cited by
-
Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor
Nano-Micro Letters (2024)
-
Symmetry-aware recursive image similarity exploration for materials microscopy
npj Computational Materials (2021)
