Extended Data Fig. 1: Field enhancement at the GaAs epilayer from the ITO-coated sapphire substrate.
From: Reconstruction of Bloch wavefunctions of holes in a semiconductor
The field enhancement is calculated as \(|1+r({f}_{{\rm{THz}}})|\) with the complex reflection coefficient \(r({f}_{{\rm{THz}}})\) measured by a Vector Network Analyzer.
