Extended Data Fig. 4: 2D-GIWAXS images of N-DMBI-H + AuNP doped organic semiconductor films.
From: Transition metal-catalysed molecular n-doping of organic semiconductors
The semiconductor films were spin-cast from their pristine or blend solutions with N-DMBI-H in CHCl3 (5 mg ml−1 for PDTzTI and N2200, 20 mg ml−1 for PDI-C6C7), then annealed at Tann = 120 °C, tann = 10 s. In all these experiments, AuNP d = 1.4 nm and the substrate is silicon. The images clearly show that, as the N-DMBI-H loading increases, the doped film crystallinity gradually decreases, eventually to a very low degree of crystallinity and near amorphous structure for all these organic semiconductor films at 100mol% N-DMBI-H loading.
