Extended Data Figure 10: Magnetoresistance and nonlocal transport at \({\boldsymbol{\nu }}={\bf{2}}\).
From: Quantum anomalous Hall effect from intertwined moiré bands
a, Magnetoresistance, Rxx(B)/Rxx(B = 0) at 300 mK under an out-of-plane magnetic field at varying electric fields. The effect is much weaker than magnetoresistance under an in-plane magnetic field (Fig. 4c, d of the main text). b, Nonlocal resistance versus filling factor around \(\nu =2\) after gap reopening. The magnetic field is zero. The arrow for I in the inset shows the direction of the bias electric field between the source and drain electrodes. Voltage drops between electrode 3 and 4 (V3-4) and between 7 and 6 (V7-6) are measured. A change in sign for the nonlocal resistance is consistent with the presence of helical edge state transport for a quantum valley-spin Hall insulator.
