Extended Data Fig. 7: The reproducibility of the 0.34 nm gate-length side-wall transistors. | Nature

Extended Data Fig. 7: The reproducibility of the 0.34 nm gate-length side-wall transistors.

From: Vertical MoS2 transistors with sub-1-nm gate lengths

Extended Data Fig. 7

Additional 49 devices are measured at VBS = 50 V, VAl = 0 V and VDS = 1 V. From additional device 1 to device 28, the measured 0.34 nm gate-length side-wall transistors are with Lch = 1 μm; from additional device 29 to device 49, the measured 0.34 nm gate-length side-wall transistors are with Lch = 0.5 μm.

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