Extended Data Fig. 4: Back-gated planar MoS2 transistors.

(a) The measured structure. The channel width and channel length are 4 μm and 5 μm, respectively. (b–p)The IDS-VBG transfer curves under different VDS bias of the 15 typical back-gated planar MoS2 transistors. The MoS2 channel is highly n-doped when VBG = 50 V.