Extended Data Table 2 The detailed parameters for HfO₂ and natural AlO_x. Here, T_ch is the channel thickness, E_g is the band gap, ε is the relative dielectric constant, χ is the electron affinity, m_e is the electron effective mass, μ_e is the electron mobility, the initial doping of Mo_S2 is 10¹⁶~10¹⁷ cm⁻³, and graphene is modeled as metal with work function set as 4.6 eV.

From: Vertical MoS₂ transistors with sub-1-nm gate lengths