Extended Data Fig. 6: Electrical and optical observation of the perpendicular full switching in the MBE-grown Mn3Sn film.
From: Perpendicular full switching of chiral antiferromagnetic order by current
a,b, Field (a) and write current (b) dependence of the switching rate of the Hall signal VH/|ΔVHfield| at room temperature in the MgO(110)-substrate/W(7 nm)/Mn3Sn(30 nm)/MgO(5 nm) stack obtained with the post-annealing temperature Ta = 700 °C. The bias magnetic field of 0.1 T and the write/read current are applied along the x direction. c,d, Magneto-optical Kerr effect (MOKE) images of the W/Mn3Sn device obtained in the field (c) and write current (d) sweep measurements. Black and grey regions correspond to the positive and negative values of the polar MOKE signal, respectively. Wch (Wprobe) is the channel (probe) width of the Hall bar.
