Extended Data Fig. 3: Structural information of the MBE-grown Mn3Sn film on the MgO substrate.
From: Perpendicular full switching of chiral antiferromagnetic order by current
a, Schematics of the interatomic arrangements in the MgO (110) substrate and Mn3Sn (\(01\bar{1}0\)) film plane. b, Crystal structure of the kagome plane in Mn3Sn. Interatomic distances and angles are obtained from the structural information of the bulk Mn3Sn with the lattice constants a = 5.665 Å and c = 4.531 Å43. c, Room-temperature spectra obtained by the X-ray diffraction (XRD) measurements using the 2θ/ω-scan for the (\(02\bar{2}0\)), (\(20\bar{2}0\)) and (\(\bar{2}200\)) planes of Mn3Sn in the MBE-grown MgO(110)-substrate/W(7 nm)/Mn3Sn(30 nm)/MgO(5 nm) stack. d, Schematics for the in-plane atomic arrangement in the Mn3Sn layer of the MBE-grown film. The interatomic distances d1 and d2 and the angle θ12 are experimentally obtained. The distance d3 and the length of the altitude parallel to the x-direction din are calculated from d1, d2, and θ12. The uniaxial tensile strain ε (pink arrows) parallel to the [\(2\bar{1}\bar{1}0\)] direction is schematically illustrated.
