Extended Data Fig. 2: Line traces extracted from Fig. 2f,g at several magnetic fields.
From: Tunable quantum criticalities in an isospin extended Hubbard model simulator
a, As parallel magnetic field increases, resistance at fractional filling \(n=7\frac{2}{3}{n}_{0}\) first increases monotonically and gradually saturates. b, For the case of vertical magnetic field, resistance at fractional filling \(n=7\frac{2}{3}{n}_{0}\) increases first and is finally overwhelmed by quantum Hall effect at high \({B}_{\perp }\).
