Extended Data Fig. 6: Comparison of MoS2 FETs with Sb (0001) and Sb \((01\bar{1}2)\) contacts.
From: Approaching the quantum limit in two-dimensional semiconductor contacts
a, Transfer characteristics of 145 MoS2 FETs (65 with Sb (0001) contact (black lines) and 80 with Sb (\(01\bar{1}2\)) contact (red lines)). Lc = 100 nm, Vds = 1V. b, The boxplot with Gaussian fitting of Ion at the same carrier density. The mean (square symbols), lower quartile (Q1, 25%), median (Q2, 50%), upper quartile (Q3, 75%), interquartile range (25%-75%) and maximum/minimum (cross symbols) are presented. The Ion of Sb (\(01\bar{1}2\)) contact is significantly improved compared with Sb (0001) contact due to the improvement of Rc.
